FULL PAPER www.afm-journal.de © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1802011 (1 of 8) Highly Polarized and Fast Photoresponse of Black Phosphorus-InSe Vertical p–n Heterojunctions Siwen Zhao, Junchi Wu, Ke Jin, Huaiyi Ding, Taishen Li, Changzheng Wu, Nan Pan,* and Xiaoping Wang* The van der Waals heterojunctions of 2D materials offer tremendous oppor- tunities in designing and investigating multifunctional and high-performance electronic and optoelectronic devices. In this study, a vertical p–n diode is constructed by vertically stacking p-type few-layer black phosphorus (BP) on n-type few-layer indium selenide (InSe). The photodetector based on the heterojunction displays a broadband and gate-modulated photoresponse under illumination. More importantly, by taking advantage of the strong linear dichroism of BP, the device demonstrates a highly polarization-sensitive photocurrent with an anisotropy ratio as high as 0.83. Additionally, the device can function in a zero-bias photovoltaic mode, enabling a fast photoresponse and low dark current. The external quantum efficiency can reach ≈3%, which is impressive for BP-based devices. The results pave the way for the implementation of p-BP/n-InSe heterostructure as a promising candidate for future multifunctional optoelectronics and, especially, polarization-sensitive applications. DOI: 10.1002/adfm.201802011 S. W. Zhao, K. Jin, Dr. H. Y. Ding, T. S. Li, Dr. N. Pan, Prof. X. P. Wang Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026, P. R. China E-mail: npan@ustc.edu.cn; xpwang@ustc.edu.cn J. C. Wu, Prof. C. Z. Wu CAS Center for Excellence in Nanoscience and CAS Key Laboratory of Mechanical Behavior and Design of Materials University of Science and Technology of China Hefei 230026, P. R. China The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802011. materials with specifical
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Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical p–n Heterojunctions
Siwen Zhao, Junchi Wu, Ke Jin, Huaiyi Ding, Taishen Li, Changzheng Wu, Nan Pan, Xiaoping Wang
Research context
Abstract The van der Waals heterojunctions of 2D materials offer tremendous opportunities in designing and investigating multifunctional and high‐performance electronic and optoelectronic devices. In this study, a vertical p–n diode is constructed by vertically stacking p‐type few‐layer black phosphorus (BP) on n‐type few‐layer indium selenide (InSe). The photodetector based on the heterojunction displays a broadband and gate‐modulated photoresponse under illumination. More importantly, by taking advantage of the strong linear dichroism of BP, the device demonstrates a highly polarization‐sensitive photocurrent with an anisotropy ratio as high as 0.83. Additionally, the device can function in a zero‐bias photovoltaic mode, enabling a fast photoresponse and low dark current. The external quantum efficiency can reach ≈3%, which is impressive for BP‐based devices. The results pave the way for the implementation of p‐BP/n‐InSe heterostructure as a promising candidate for future multifunctional optoelectronics and, especially, polarization‐sensitive applications.
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Siwen Zhao, Junchi Wu, Ke Jin, Huaiyi Ding, Taishen Li, Changzheng Wu, Nan Pan, Xiaoping Wang. Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical p–n Heterojunctions. Advanced Functional Materials (2018). https://doi.org/10.1002/adfm.201802011
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