Advanced Materials www.advmat.de RESEARCH ARTICLE A Novel Approach for the Fabrication of Polarization-Selectivity UV Photosynapse Devices With PdSe2/ a-plane GaN Heterostructures Tingting Lin1 Liwei Liu2 Xinguo Liu2 Changjian Zhou1 Wenliang Wang1,2 1School of Integrated Circuits, South China University of Technology, Guangzhou, China 2School of Materials Science and Engineering, South China University of Technology, Guangzhou, China Correspondence: Wenliang Wang (wenliangwang@scut.edu.cn) Received: 26 November 2025 Revised: 25 May 2026 Accepted: 29 May 2026 Keywords: photosynapse | polarization-selectivity | pre-selenization | reconfigurable device ABSTRACT High polarization-selectivity UV photodetectors with multifunctional integration play a crucial role in the next-generation optoelectronic devices. However, weak and unruly dichroism radio (DR) of naturally anisotropic materials seriously restricts the detection accuracy and practical application, especially for wide-bandgap materials with rough surfaces and inherent weak anisotropy. In this work, a novel approach for the polarization-selectivity UV photosynapse devices with PdSe2/ a- plane GaN heterostructures has been proposed. A simple pre-selenization treatment is employed to enhance the anisotropy (DR = 16) and crystallinity of PdSe2, addressing the current limitation of insufficient anisotropy (DR<5) that hinders the practical application. The devices take advantage of inherent anisotropic materials and synergistic effect from the in situ growth of PdSe2 on a-plane GaN, resulting in an enhancement of anisotr
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A Novel Approach for the Fabrication of Polarization‐Selectivity UV Photosynapse Devices With PdSe₂ / a ‐plane GaN Heterostructures
Tingting Lin, Liwei Liu, Xinguo Liu, Changjian Zhou, Wenliang Wang
Research context
ABSTRACT High polarization‐selectivity UV photodetectors with multifunctional integration play a crucial role in the next‐generation optoelectronic devices. However, weak and unruly dichroism radio (DR) of naturally anisotropic materials seriously restricts the detection accuracy and practical application, especially for wide‐bandgap materials with rough surfaces and inherent weak anisotropy. In this work, a novel approach for the polarization‐selectivity UV photosynapse devices with PdSe 2 / a ‐plane GaN heterostructures has been proposed. A simple pre‐selenization treatment is employed to enhance the anisotropy (DR = 16) and crystallinity of PdSe 2 , addressing the current limitation of insufficient anisotropy (DR<5) that hinders the practical application. The devices take advantage of inherent anisotropic materials and synergistic effect from the in situ growth of PdSe 2 on a ‐plane GaN, resulting in an enhancement of anisotropic photocurrent ratio from 1. 6 to 10.7. Thanks to the synergistic effect of the whole device architecture, the devices reveal an ultra‐long relaxation time of up to 282s and effectively improve the details of image recognition, speed up calculations, and
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Tingting Lin, Liwei Liu, Xinguo Liu, Changjian Zhou, Wenliang Wang. A Novel Approach for the Fabrication of Polarization‐Selectivity UV Photosynapse Devices With PdSe₂ / a ‐plane GaN Heterostructures. Advanced Materials (2026). https://doi.org/10.1002/adma.73664
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