phosphorus/molybdenum disulfide (BP/MoS2) heterostructures that combines polarization detection and amplification within a single architecture. By exploiting gate-tunable transconductance in the linear amplification region, the device achieves a PR up to 510 via a “stretching” mechanism, while maintaining a polarization angle sensitivity (PAS) up to ~46.57 mA/(W·degree) and response times down to ~0.8 μs under 3.5 μm illumination. This combination of high polarization sensitivity, responsivity, and speed establishes PPFETs as a powerful platform for high-performance MIR polarization detection and paves the way for compact, high-precision imaging systems.
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Polarization Photovoltage Transistor enabling Amplified Responsivity and Sensitivity
Jiayue Han, Fakun Wang, Chunyu Li, Wenjie Deng, Shi Zhang, Libo Zhang, Fangchen Hu, Zhen Wang, Hongxi Zhou, He Yu, Jun Gou, Zhiming Wu, Zhiming Wang, Yadong Jiang, Qi Jie Wang, Jun Wang
Research context
With the rapid advancement of multi-dimensional detection, there is an urgent demand for next-generation polarization detectors capable of achieving high responsivity, fast speed, and strong polarization sensitivity, metrics that are typically limited by fundamental trade-offs. Two-dimensional (2D) materials offer a promising platform, yet their weak intrinsic anisotropy constrains polarization ratio (PR) and overall device performance. Here, we report a mid-infrared (MIR) polarization photovoltage field-effect transistor (PPFET) based on black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures that combines polarization detection and amplification within a single architecture. By exploiting gate-tunable transconductance in the linear amplification region, the device achieves a PR up to 510 via a “stretching” mechanism, while maintaining a polarization angle sensitivity (PAS) up to ~46.57 mA/(W·degree) and response times down to ~0.8 μs under 3.5 μm illumination. This combination of high polarization sensitivity, responsivity, and speed establishes PPFETs as a powerful platform for high-performance MIR polarization detection and paves the way for compact, high-precision ima
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Jiayue Han, Fakun Wang, Chunyu Li, Wenjie Deng, Shi Zhang, Libo Zhang, Fangchen Hu, Zhen Wang, Hongxi Zhou, He Yu, Jun Gou, Zhiming Wu, Zhiming Wang, Yadong Jiang, Qi Jie Wang, Jun Wang. Polarization Photovoltage Transistor enabling Amplified Responsivity and Sensitivity. Nature Communications (2026). https://doi.org/10.1038/s41467-026-71444-6
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