RESEARCH ARTICLE www.advmat.de Polarization Signal Amplification of 2D GeSe-Based Polarization-Sensitive Photodetectors Kexin He, Wenhao Ran, Shaodi Xu, Jie Wen, Siqi Qiu, Tingwei Liu, Kaiyao Xin, Yali Yu, Duan-Yang Liu, Qianqian Huang,* Guozhen Shen,* Zhongming Wei,* and Ziqi Zhou* Polarization-sensitive photodetectors, resolving light intensity, wavelength, and polarization states, enable the characterization of probing microstructure, internal stress, and compositional heterogeneity. Polarizer-free polarization-sensitive photodetectors based on in-plane anisotropic 2D semiconductors offer potential for device miniaturization and on-chip integration, owing to their inherent linear dichroism and orientation-dependent carrier mobilities. Hundreds of in-plane anisotropic 2D materials have been successfully discovered; however, the limited anisotropic photocurrent ratio (PR<10) has hindered the practical application. Herein, a field-effect transistor (FET)-based amplification strategy, enhancing PR from 2.1 to 54.8 in 2D GeSe photodetectors is proposed. This significant PR enhancement arises from polarization-induced resistance variations dynamically modulating gate potentials. Coupled with a steep transistor subthreshold region, small gate fluctuations produce substantial drain current changes, amplifying output anisotropy sensitively. Evaluating four types of FET identifies SMT-Si transistors as optimal due to their high stability, sharp subthreshold, and excellent noise immunity. In addition, the amplified PR signa
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Polarization Signal Amplification of 2D GeSe‐Based Polarization‐Sensitive Photodetectors
Kexin He, Wenhao Ran, Shaodi Xu, Jie Wen, Siqi Qiu, Tingwei Liu, Kaiyao Xin, Yali Yu, Duan‐Yang Liu, Qianqian Huang, Guozhen Shen, Zhongming Wei, Ziqi Zhou
Research context
Polarization-sensitive photodetectors, resolving light intensity, wavelength, and polarization states, enable the characterization of probing microstructure, internal stress, and compositional heterogeneity. Polarizer-free polarization-sensitive photodetectors based on in-plane anisotropic 2D semiconductors offer potential for device miniaturization and on-chip integration, owing to their inherent linear dichroism and orientation-dependent carrier mobilities. Hundreds of in-plane anisotropic 2D materials have been successfully discovered; however, the limited anisotropic photocurrent ratio (PR<10) has hindered the practical application. Herein, a field-effect transistor (FET)-based amplification strategy, enhancing PR from 2.1 to 54.8 in 2D GeSe photodetectors is proposed. This significant PR enhancement arises from polarization-induced resistance variations dynamically modulating gate potentials. Coupled with a steep transistor subthreshold region, small gate fluctuations produce substantial drain current changes, amplifying output anisotropy sensitively. Evaluating four types of FET identifies SMT-Si transistors as optimal due to their high stability, sharp subthreshold, and exce
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Kexin He, Wenhao Ran, Shaodi Xu, Jie Wen, Siqi Qiu, Tingwei Liu, Kaiyao Xin, Yali Yu, Duan‐Yang Liu, Qianqian Huang, Guozhen Shen, Zhongming Wei, Ziqi Zhou. Polarization Signal Amplification of 2D GeSe‐Based Polarization‐Sensitive Photodetectors. Advanced Materials (2025). https://doi.org/10.1002/adma.202509066
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