@article{PB-C34914479C4BCE17D09B,
  title = {Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors},
  author = {J. John and Veerendra Dhyani and Sudarshan Singh and Alka Jakhar and Arijit Sarkar and Samaresh Das and S. K. Ray},
  journal = {Nanotechnology},
  year = {2021},
  doi = {10.1088/1361-6528/abf6f0}
}